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| MITSUBISHI TRANSISTOR MODULES QM400HA-24 HIGH POWER SWITCHING USE INSULATED TYPE QM400HA-24 * * * * * IC Collector current ........................ 400A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 0.5 3-M4 10 20.5 BX 23.5 93 4-6.5 28 E C 2-M8 30.5 BX E B C 10 10 9 90 70 B 9 22 9 E 18 18 41.5 26 113 3 26 16.5 E 7 21.5 30 LABEL 37 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM400HA-24 HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 400 400 3120 20 4000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M8 2500 8.83~10.8 90~110 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 870 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm N*m kg*cm g Mounting screw M6 -- Mounting torque B(E) terminal screw M4 BX terminal screw M4 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=400A, IB=8A -IC=400A (diode forward voltage) IC=400A, VCE=5V Min. -- -- -- -- -- -- 75 -- VCC=600V, IC=400A, IB1=-IB2=8A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 8.0 8.0 600 3.0 3.5 1.8 -- 3.0 18 3.0 0.04 0.175 0.02 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM400HA-24 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 800 Tj=25C 3 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) 700 600 500 400 300 200 100 0 0 1 2 3 DC CURRENT GAIN hFE IB=12A IB=8A IB=4A IB=2A IB=0.5A VCE=5.0V 10 3 7 5 4 3 2 10 2 7 5 4 3 10 1 Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 1.8 2.2 2.6 3.0 3.4 3.8 VCE=2.8V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1 IB=8A Tj=25C Tj=125C VBE(sat) BASE CURRENT IB (A) SATURATION VOLTAGE VCE(sat) 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 3 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 2 10 1 7 5 4 3 2 10 0 7 5 4 3 10 1 VCC=600V IB1=-IB2=8 A Tj=25C Tj=125C tf ts 4 IC=300A IC=100A IC=400A IC=200A 3 SWITCHING TIME ton 2 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM400HA-24 HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 REVERSE BIAS SAFE OPERATING AREA 800 SWITCHING TIME 10 1 7 5 4 3 2 10 0 VCC=600V IC=400A 7 IB1=8A 5 Tj=25C 4 Tj=125C 3 10 0 2 3 4 5 7 10 1 COLLECTOR CURRENT IC (A) ts, tf (s) 700 600 IB2=-16A 500 400 300 200 100 Tj=125C ts IB2=-8A tf 2 3 4 5 7 10 2 0 0 200 400 600 800 1000 1200 1400 1600 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 100 90 DERATING FACTOR OF F. B. S. O. A. S S 50 100 S 500 COLLECTOR CURRENT IC (A) 1m D S DERATING FACTOR (%) C 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 7 10 1 0.05 0.04 Zth (j-c) (C/ W) 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0.03 0.02 0.01 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 0.4 0.8 1.2 1.6 Tj=25C Tj=125C 2.0 2.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM400HA-24 HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 4000 3500 3000 2500 2000 1500 1000 500 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 5 3 2 10 2 7 5 3 2 VCC=600V IB1=-IB2=8A Tj=25C Tj=125C 10 2 Irr Qrr 10 1 trr (s) FORWARD CURRENT IF (A) Feb.1999 10 1 10 0 trr 7 5 3 2 10 -1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 0.20 0.16 Zth (j-c) (C/ W) 0.12 0.08 0.04 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) |
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